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RENESAS - TP65H050G4WS - Gallium Nitride (GaN) Transistor, 650 V, 34 A, 0.06 ohm, 16 nC, TO-247, Through Hole
Category
Mfr Part #
TP65H050G4WS
Life Cycle
STOCKED
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| Continuous Drain Current Id | 34A |
| Drain Source On State Resistance | 0.06ohm |
| Drain Source Voltage Vds | 650V |
| euEccn | NLR |
| hazardous | false |
| No. of Pins | 3Pins |
| Product Range | SuperGaN Series |
| productTraceability | No |
| Qualification | - |
| rohsCompliant | Yes |
| rohsPhthalatesCompliant | TBA |
| SVHC | No SVHC (12-Jan-2017) |
| tariffCode | 85411000 |
| Transistor Case Style | TO-247 |
| Transistor Mounting | Through Hole |
| Typical Gate Charge | 16nC |
| usEccn | EAR99 |
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