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TP65H035G4YS

RENESAS - TP65H035G4YS - Gallium Nitride (GaN) Transistor, 650 V, 46.5 A, 0.041 ohm, 42.7 nC, TO-247, Through Hole

Element14

Part Status : STOCKED

Element14

Stock : 1181

Packaging Type

EACH

VendorPart#

4680953

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Continuous Drain Current Id	46.5A
Drain Source On State Resistance	0.041ohm
Drain Source Voltage Vds	650V
euEccn	NLR
hazardous	false
No. of Pins	4Pins
Product Range	SuperGaN Series
productTraceability	No
Qualification	-
rohsCompliant	Yes
rohsPhthalatesCompliant	TBA
SVHC	No SVHC (21-Jan-2025)
tariffCode	85411000
Transistor Case Style	TO-247
Transistor Mounting	Through Hole
Typical Gate Charge	42.7nC
usEccn	EAR99