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HAT2165HWS-E

MOSFET N-CH 30V 55A 5LFPAK

DigiKey Electronics

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DigiKey Electronics

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HAT2165HWS-E-ND

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Current - Continuous Drain (Id) @ 25°C	55A (Ta)
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	33nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	5180pF @ 10V
Manufacturer	Renesas Electronics America Inc
Mounting Type	Surface Mount
Operating Temperature	150°C
Package / Case	SC-100, SOT-669
Packaging	Tape & Reel (TR)
Part Status	Obsolete
Power Dissipation (Max)	30W (Tc)
Rds On (Max) @ Id, Vgs	3.3mOhm @ 27.5A, 10V
Supplier Device Package	5-LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 1mA