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HAT2054M-EL-E

Power Field-Effect Transistor, 6.3A I(D), 30V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

DigiKey Electronics

Part Status :

DigiKey Electronics

Stock : 0

Packaging Type

VendorPart#

2156-HAT2054M-EL-E-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Quantity

Min: 550

Mult: 550

Order Value

Current - Continuous Drain (Id) @ 25°C	6.3A (Ta)
Drain to Source Voltage (Vdss)	30V
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	620pF @ 10V
Manufacturer	Rochester Electronics, LLC
Mounting Type	Surface Mount
Operating Temperature	150°C
Package / Case	SOT-23-6 Thin, TSOT-23-6
Packaging	Bulk
Part Status	Active
Power Dissipation (Max)	1.05W (Ta)
Rds On (Max) @ Id, Vgs	31mOhm @ 3A, 10V
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 1mA