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RM6N800HD

MOSFET N-CHANNEL 800V 6A TO263-2

DigiKey Electronics

Part Status :

DigiKey Electronics

Stock : 0

Packaging Type

VendorPart#

2516-RM6N800HDTR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Quantity

Min: 8000

Mult: 1

Order Value

Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drain to Source Voltage (Vdss)	800V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	22.8nC @ 50V
Input Capacitance (Ciss) (Max) @ Vds	1320pF @ 50V
Manufacturer	Rectron USA
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging	Tape & Reel (TR)
Part Status	Active
Power Dissipation (Max)	98W (Tc)
Rds On (Max) @ Id, Vgs	900mOhm @ 4A, 10V
Supplier Device Package	TO-263-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4V @ 250µA