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UJ3C065080B3

UJ3C065080B3

Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 18.2A

Mfr Part #

UJ3C065080B3

Life Cycle

HSN Code

0000

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Suppliers

TME

TME

Stock : 1

Packaging Type

-

VendorPart#

UJ3C065080B3

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

Specifications

Case

D2PAK

Drain current

18.2A

Drain-source voltage

650V

Features of semiconductor devices

ESD protected gate

Gate charge

51nC

Gate-source voltage

±25V

Kind of transistor

cascode

Manufacturer

Qorvo (UnitedSiC)

Mounting

SMD

On-state resistance

80mΩ

Polarisation

Unipolar

Power dissipation

115W

Pulsed drain current

65A

Technology

SiC

Type of transistor

N-JFET/N-MOSFET