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UF3C065080K4S

Transistor: N-JFET/N-MOSFET; SiC; unipolar; cascode; 650V; 23A

TME

Part Status :

TME

Stock : 4

Packaging Type

VendorPart#

UF3C065080K4S

Ware House

Poland Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

Case	TO247-4
Drain current	23A
Drain-source voltage	650V
Features of semiconductor devices	ESD protected gate
Features of semiconductor devices	Kelvin terminal
Gate charge	43nC
Gate-source voltage	±25V
Kind of transistor	cascode
Manufacturer	Qorvo (UnitedSiC)
Mounting	THT
On-state resistance	80mΩ
Polarisation	Unipolar
Power dissipation	190W
Pulsed drain current	65A
Technology	SiC
Type of transistor	N-JFET/N-MOSFET