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PJQ5462A_R2_00001

PJQ5462A_R2_00001

Power Field-Effect Transistor, 8.5A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 0

Packaging Type

Digi-Reel®

VendorPart#

3757-PJQ5462A_R2_00001DKR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541.29.0095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 0

Packaging Type

Cut Tape (CT)

VendorPart#

3757-PJQ5462A_R2_00001CT-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541.29.0095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 0

Packaging Type

Tape & Reel (TR)

VendorPart#

3757-PJQ5462A_R2_00001TR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541.29.0095

Date Code

Within 2 years

Quantity

Min: 3000

Mult: 3000

Order Value

Specifications

Current - Continuous Drain (Id) @ 25°C	8.5A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2142 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	8-PowerVDFN
Packaging	Tape & Reel (TR)
Part Status	Active
Power Dissipation (Max)	2W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs	12mOhm @ 20A, 10V
Supplier Device Package	DFN5060-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA