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BFL4004

Power Field-Effect Transistor, 4.3A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

DigiKey Electronics

Part Status :

DigiKey Electronics

Stock : 10870

Packaging Type

VendorPart#

2156-BFL4004-SA-ND

Ware House

US Warehouse

Date Code

Quantity

Min: 102

Mult: 102

Order Value

Current - Continuous Drain (Id) @ 25°C	4.3A (Tc)
Drain to Source Voltage (Vdss)	800V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	710pF @ 30V
Manufacturer	Rochester Electronics, LLC
Mounting Type	Through Hole
Operating Temperature	150°C
Package / Case	TO-220-3 Full Pack
Packaging	Bulk
Part Status	Obsolete
Power Dissipation (Max)	2W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs	2.5Ohm @ 3.25A, 10V
Supplier Device Package	TO-220FI(LS)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4V @ 1mA