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2SK2625ALS

Power Field-Effect Transistor, 5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

DigiKey Electronics

Part Status :

DigiKey Electronics

Stock : 0

Packaging Type

VendorPart#

2156-2SK2625ALS-SA-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Quantity

Min: 153

Mult: 1

Order Value

Current - Continuous Drain (Id) @ 25°C	4.4A (Tc)
Drain to Source Voltage (Vdss)	600V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 20V
Mounting Type	Through Hole
Operating Temperature	150°C (TJ)
Package / Case	TO-220-3 Full Pack
Packaging	Bulk
Part Status	Obsolete
Power Dissipation (Max)	2W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs	2Ohm @ 2.5A, 15V
Supplier Device Package	TO-220FI(LS)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	-