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NXH008P120M3F1PG

NXH008P120M3F1PG

MOSFET Modules 8M OHM 1200V 40A M3S SIC HALF BRIDGE MODULE

Master Electronics

Stock : 0

Packaging Type

VendorPart#

Factory Lead Time

9 Days

Ware House

US Warehouse

HTS Code

8542.39.0001

Date Code

Within 2 years

Quantity

Min: 7

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 18

Packaging Type

Tray

VendorPart#

5556-NXH008P120M3F1PG-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Mouser Electronics

Part Status : New Product

Mouser Electronics

Stock : 26

Packaging Type

VendorPart#

863-NXH008P120M3F1PG

Ware House

US Warehouse

HTS Code

8542390001

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	145A (Tc)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
FET Feature	Silicon Carbide (SiC)
Gate Charge (Qg) (Max) @ Vgs	419nC @ 18V
Grade	-
Input Capacitance (Ciss) (Max) @ Vds	8334pF @ 800V
Mounting Type	Chassis Mount
Operating Temperature	-40°C ~ 175°C (TJ)
Package / Case	Module
Power - Max	382W (Tj)
Qualification	-
Rds On (Max) @ Id, Vgs	10.9mOhm @ 120A, 18V
Supplier Device Package	-
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	4.4V @ 60mA