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NXH003P120M3F2PTNG

NXH003P120M3F2PTNG

MOSFET Modules Silicon Carbide (SiC) Module - EliteSiC, 3 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package Silicon Carbide (SiC) Module EliteSiC, 3 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package

Element14

Part Status : STOCKED

Element14

Stock : 40

Packaging Type

EACH

VendorPart#

4305079

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 68

Packaging Type

Tray

VendorPart#

5556-NXH003P120M3F2PTNG-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Master Electronics

Stock : 0

Packaging Type

VendorPart#

Factory Lead Time

12 Days

Ware House

US Warehouse

HTS Code

8541.29.0095

Date Code

Within 2 years

Quantity

Min: 5

Mult: 1

Order Value

Mouser Electronics

Part Status : New Product

Mouser Electronics

Stock : 89

Packaging Type

VendorPart#

863-H003P120M3F2PTNG

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	435A (Tj)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
FET Feature	-
Gate Charge (Qg) (Max) @ Vgs	1200nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds	20889pF @ 800V
Mounting Type	Chassis Mount
Operating Temperature	-40°C ~ 150°C (TJ)
Package / Case	Module
Packaging	Tray
Power - Max	1.48kW (Tj)
Rds On (Max) @ Id, Vgs	5mOhm @ 200A, 18V
Supplier Device Package	36-PIM (56.7x62.8)
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	4.4V @ 160mA