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NVHL070N120M3S

NVHL070N120M3S

MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 65 mohm, 1200 V, M3S, TO-247-3L

Mouser Electronics

Part Status : New Product

Mouser Electronics

Stock : 442

Packaging Type

VendorPart#

863-NVHL070N120M3S

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 410

Packaging Type

Tube

VendorPart#

5556-NVHL070N120M3S-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Element14

Part Status : STOCKED

Element14

Stock : 440

Packaging Type

EACH

VendorPart#

4317979

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Current - Continuous Drain (Id) @ 25°C	34A (Tc)
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	57 nC @ 18 V
Grade	automotive
Input Capacitance (Ciss) (Max) @ Vds	1230 pF @ 800 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-247-3
Packaging	tube
Power Dissipation (Max)	160W (Tc)
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	87mOhm @ 15A, 18V
Supplier Device Package	TO-247-3
Technology	SiC (Silicon Carbide Junction Transistor)
Vgs (Max)	+22V, -10V
Vgs(th) (Max) @ Id	4.4V @ 7mA