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NDSH10120C-F155

NDSH10120C-F155

Schottky Diodes & Rectifiers Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 450

Packaging Type

Tube

VendorPart#

5556-NDSH10120C-F155-ND

Ware House

US Warehouse

HTS Code

8541100080

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Mouser Electronics

Part Status : New Product

Mouser Electronics

Stock : 446

Packaging Type

VendorPart#

863-NDSH10120C-F155

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Element14

Part Status : STOCKED

Element14

Stock : 15

Packaging Type

EACH

VendorPart#

4381461

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Average Forward Current	10A
Capacitance @ Vr, F	680pF @ 1V, 100kHz
Current - Average Rectified (Io)	12A
Current - Reverse Leakage @ Vr	200 µA @ 1200 V
Diode Case Style	TO-247
Diode Configuration	Single
Diode Mounting	Through Hole
euEccn	NLR
Grade	-
hazardous	false
Mounting Type	Through Hole
No. of Pins	2 Pin
Operating Temperature - Junction	-55°C ~ 175°C
Operating Temperature Max	175°C
Package / Case	TO-247-2
Packaging	tube
Product Range	-
productTraceability	No
Qualification	-
Repetitive Peak Reverse Voltage	1.2kV
Reverse Recovery Time (trr)	0 ns
rohsCompliant	Yes
rohsPhthalatesCompliant	TBA
Speed	No Recovery Time > 500mA (Io)
Supplier Device Package	TO-247-2
SVHC	No SVHC (23-Jan-2024)
tariffCode	85411000
Technology	SiC (Silicon Carbide) Schottky
Total Capacitive Charge	46nC
usEccn	EAR99
Voltage - DC Reverse (Vr) (Max)	1200 V
Voltage - Forward (Vf) (Max) @ If	1.75 V @ 10 A