Final Unit Price is calculated at the checkout is inclusive of Indian Customs Duty, International Freight, Insurance, Handling Fees and other charges

HGTP10N120BN

Transistor: IGBT; 1200V; 17A; 298W; TO220AB

TME

Part Status :

TME

Stock : 0

Packaging Type

VendorPart#

HGTP10N120BN

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

Part Status : Obsolete

DigiKey Electronics

* US shipping restriction from digikey

RESTRICTED*

Packaging Type

Tube

VendorPart#

HGTP10N120BNFS-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 0

Mult: 0

Order Value

Current - Collector (Ic) (Max)	35 A
Current - Collector Pulsed (Icm)	80 A
Gate charge	100 nC
IGBT Type	NPT
Input Type	Standard
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-220-3
Power - Max	298 W
Supplier Device Package	TO-220-3
Switching Energy	320µJ (on), 800µJ (off)
Td (on/off) @ 25°C	23ns/165ns
Test Condition	960V, 10A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 10A
Voltage - Collector Emitter Breakdown (Max)	1200 V