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FQN1N60CBU

Small Signal Field-Effect Transistor, 0.3A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

DigiKey Electronics

Part Status : Obsolete

DigiKey Electronics

* US shipping restriction from digikey

RESTRICTED*

Packaging Type

Bulk

VendorPart#

FQN1N60CBU-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 0

Mult: 0

Order Value

Current - Continuous Drain (Id) @ 25°C	300mA (Tc)
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	170 pF @ 25 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Packaging	Bulk
Part Status	Obsolete
Power Dissipation (Max)	1W (Ta), 3W (Tc)
Rds On (Max) @ Id, Vgs	11.5Ohm @ 150mA, 10V
Supplier Device Package	TO-92-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4V @ 250µA