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FDW2501N

Small Signal Field-Effect Transistor, 6A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Element14

Part Status :

Element14

Stock : 0

Packaging Type

EACH

VendorPart#

1495297

Factory Lead Time

258 Days

Ware House

UK Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

Part Status : Obsolete

DigiKey Electronics

* US shipping restriction from digikey

RESTRICTED*

Packaging Type

Tape & Reel (TR)

VendorPart#

FDW2501N-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541210095

Date Code

Within 2 years

Quantity

Min: 0

Mult: 0

Order Value

Automotive Qualification Standard	-
Configuration	2 N-Channel (Dual)
Continuous Drain Current Id	6A
Current - Continuous Drain (Id) @ 25°C	6A
Drain Source Voltage Vds	20V
Drain to Source Voltage (Vdss)	20V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1290pF @ 10V
Mounting Type	Surface Mount
No. of Pins	8Pins
On Resistance Rds(on)	0.018ohm
Operating Temperature	-55°C ~ 150°C (TJ)
Operating Temperature Max	150°C
Package / Case	8-TSSOP (0.173", 4.40mm Width)
Packaging	Tape & Reel (TR)
Power - Max	600mW
Power Dissipation Pd	1W
Product Range	-
Rds On (Max) @ Id, Vgs	18mOhm @ 6A, 4.5V
Rds(on) Test Voltage Vgs	4.5V
Supplier Device Package	8-TSSOP
SVHC	No SVHC (15-Jan-2018)
Technology	MOSFET (Metal Oxide)
Threshold Voltage Vgs	900mV
Transistor Case Style	TSSOP
Transistor Mounting	Surface Mount
Transistor Polarity	N Channel
Vgs(th) (Max) @ Id	1.5V @ 250µA