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FDS6680S

Small Signal Field-Effect Transistor, 11.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

DigiKey Electronics

Part Status :

DigiKey Electronics

Stock : 60638

Packaging Type

VendorPart#

2156-FDS6680S-ND

Ware House

US Warehouse

Date Code

Quantity

Min: 628

Mult: 628

Order Value

Current - Continuous Drain (Id) @ 25°C	11.5A (Ta)
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	24nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	2.01pF @ 15V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Packaging	Bulk
Part Status	Obsolete
Power Dissipation (Max)	2.5W (Ta)
Rds On (Max) @ Id, Vgs	11mOhm @ 11.5A, 10V
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3V @ 250µA