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FDS6064N3

Small Signal Field-Effect Transistor, 23A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Element14

Part Status : NO_LONGER_MANUFACTURED

Element14

Stock : 0

Packaging Type

EACH

VendorPart#

1495153

Factory Lead Time

43 Days

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Part Status : Obsolete

DigiKey Electronics

Stock : 0

Packaging Type

Tape & Reel (TR)

VendorPart#

FDS6064N3TR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 2500

Mult: 2500

Order Value

Automotive Qualification Standard	-
Continuous Drain Current Id	23A
Current - Continuous Drain (Id) @ 25°C	23A (Ta)
Drain Source Voltage Vds	20V
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	98 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	7191 pF @ 10 V
Mounting Type	Surface Mount
No. of Pins	8Pins
On Resistance Rds(on)	0.0034ohm
Operating Temperature	-55°C ~ 150°C (TJ)
Operating Temperature Max	150°C
Package / Case	8-SOIC (0.154", 3.90mm Width) Exposed Pad
Power Dissipation (Max)	3W (Ta)
Power Dissipation Pd	3mW
Product Range	-
Rds On (Max) @ Id, Vgs	4mOhm @ 23A, 4.5V
Rds(on) Test Voltage Vgs	4.5V
Supplier Device Package	8-SO FLMP
Technology	MOSFET (Metal Oxide)
Threshold Voltage Vgs	600mV
Transistor Case Style	SOIC
Transistor Mounting	Surface Mount
Transistor Polarity	N Channel
Vgs (Max)	±8V
Vgs(th) (Max) @ Id	1.5V @ 250µA