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GAN3R2-100CBEAZ

GAN3R2-100CBEAZ

GaN FETs SOT8072 100V 60A FET

Category

Mfr Part #

GAN3R2-100CBEAZ

Life Cycle

New Product

HSN Code

85412900

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Suppliers

Mouser Electronics

Mouser Electronics

Stock : 2087

Packaging Type

-

VendorPart#

771-GAN3R2-100CBEAZ

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

DigiKey Electronics

DigiKey Electronics

Stock : 672

Packaging Type

Digi-Reel®

VendorPart#

1727-GAN3R2-100CBEAZDKR-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Tape & Reel (TR)

VendorPart#

1727-GAN3R2-100CBEAZTR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1500
Mult: 1500

0

DigiKey Electronics

DigiKey Electronics

Stock : 672

Packaging Type

Cut Tape (CT)

VendorPart#

1727-GAN3R2-100CBEAZCT-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

Element14

Element14

Stock : 392

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

4198483RL

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 100
Mult: 1

Element14

Element14

Stock : 392

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

4198483

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 1
Mult: 1

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

GAN3R2-100CBEAZ

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 1500
Mult: 1500

0

Specifications

Case

WLCSP8

Continuous Drain Current Id

60A

Current - Continuous Drain (Id) @ 25°C

60A

Drain current

60A

Drain Source On State Resistance

0.0024ohm

Drain Source Voltage Vds

100V

Drain to Source Voltage (Vdss)

100 V

Drain-source voltage

100V

Drive Voltage (Max Rds On, Min Rds On)

5V

euEccn

NLR

FET Feature

-

FET Type

N-Channel

Gate charge

12nC

Gate Charge (Qg) (Max) @ Vgs

12 nC @ 5 V

Gate-source voltage

-4...6V

Grade

-

hazardous

false

Input Capacitance (Ciss) (Max) @ Vds

1000 pF @ 50 V

Kind of channel

enhanced

Kind of package

tape

Kind of transistor

HEMT

Manufacturer

NEXPERIA

Mounting

SMD

Mounting Type

Surface Mount

No. of Pins

8Pins

On-state resistance

3.2mΩ

Operating Temperature

-40°C ~ 150°C (TJ)

Package / Case

8-XFBGA, WLCSP

Polarisation

Unipolar

Power dissipation

394W

Power Dissipation (Max)

394W

productTraceability

No

Pulsed drain current

230A

Qualification

-

Rds On (Max) @ Id, Vgs

3.2mOhm @ 25A, 5V

rohsCompliant

Yes

rohsPhthalatesCompliant

Yes

Supplier Device Package

8-WLCSP (3.5x2.13)

SVHC

No SVHC (23-Jan-2024)

tariffCode

85381090

Technology

GaNFET (Gallium Nitride)

Technology

GaN

Type of transistor

N-JFET

Typical Gate Charge

9.2nC

usEccn

EAR99

Vgs (Max)

+6V, -4V

Vgs(th) (Max) @ Id

2.5V @ 9mA