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GAN190-650FBEZ

GAN190-650FBEZ

GaN FETs SOT8075 650V 11.5A FET

Mouser Electronics

Part Status : New Product

Mouser Electronics

Stock : 1584

Packaging Type

VendorPart#

771-GAN190-650FBEZ

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 0

Packaging Type

Tape & Reel (TR)

VendorPart#

1727-GAN190-650FBEZTR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 2500

Mult: 2500

Order Value

Element14

Part Status : STOCKED

Element14

Stock : 2321

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

4198482RL

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 100

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 1776

Packaging Type

Cut Tape (CT)

VendorPart#

1727-GAN190-650FBEZCT-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 1776

Packaging Type

Digi-Reel®

VendorPart#

1727-GAN190-650FBEZDKR-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Element14

Part Status : STOCKED

Element14

Stock : 2321

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

4198482

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

TME

Part Status :

TME

Stock : 0

Packaging Type

VendorPart#

GAN190-650FBEZ

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Quantity

Min: 2500

Mult: 2500

Order Value

Specifications

Continuous Drain Current Id	11.5A
Current - Continuous Drain (Id) @ 25°C	11.5A (Tc)
Drain Source On State Resistance	0.138ohm
Drain Source Voltage Vds	650V
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	6V
euEccn	NLR
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.8 nC @ 6 V
Grade	-
hazardous	false
Input Capacitance (Ciss) (Max) @ Vds	96 pF @ 400 V
Mounting Type	Surface Mount, Wettable Flank
No. of Pins	8Pins
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	8-PowerVDFN
Power Dissipation (Max)	125W (Tc)
Product Range	-
productTraceability	No
Qualification	-
Rds On (Max) @ Id, Vgs	190mOhm @ 3.9A, 6V
rohsCompliant	Yes
rohsPhthalatesCompliant	Yes
Supplier Device Package	DFN5060-5
SVHC	No SVHC (14-Jun-2023)
tariffCode	85381090
Technology	GaNFET (Gallium Nitride)
Transistor Case Style	DFN5060
Transistor Mounting	Surface Mount
Typical Gate Charge	2.8nC
usEccn	EAR99
Vgs (Max)	+7V, -1.4V
Vgs(th) (Max) @ Id	2.5V @ 12.2mA