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GAN140-650FBEZ

GAN140-650FBEZ

GaN FETs SOT8075 650V 17A FET

Category

Mfr Part #

GAN140-650FBEZ

Mfr

Life Cycle

New Product

HSN Code

85412900

Nexperia

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Suppliers

Mouser Electronics

Part Status : New Product

Mouser Electronics

Stock : 2277

Packaging Type

-

VendorPart#

771-GAN140-650FBEZ

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 2366

Packaging Type

Digi-Reel®

VendorPart#

1727-GAN140-650FBEZDKR-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 2366

Packaging Type

Cut Tape (CT)

VendorPart#

1727-GAN140-650FBEZCT-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 0

Packaging Type

Tape & Reel (TR)

VendorPart#

1727-GAN140-650FBEZTR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 2500
Mult: 2500

0

Element14

Part Status : STOCKED

Element14

Stock : 2200

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

4198479

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 1
Mult: 1

Element14

Part Status : STOCKED

Element14

Stock : 2200

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

4198479RL

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 100
Mult: 1

TME

Part Status :

TME

Stock : 0

Packaging Type

-

VendorPart#

GAN140-650FBEZ

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 2500
Mult: 2500

0

Specifications

Case

DFN5060-5
Continuous Drain Current Id

17A
Current - Continuous Drain (Id) @ 25°C

17A (Tc)
Drain current

17A
Drain current

17A
Drain Source On State Resistance

0.106ohm
Drain Source Voltage Vds

650V
Drain to Source Voltage (Vdss)

650 V
Drain-source voltage

650V
Drain-source voltage

650V
Drive Voltage (Max Rds On, Min Rds On)

6V
euEccn

NLR
Features of semiconductor devices

Kelvin terminal
FET Feature

-
FET Type

N-Channel
Gate charge

3.5nC
Gate Charge (Qg) (Max) @ Vgs

3.5 nC @ 6 V
Gate-source voltage

-1.4...7V
Grade

-
hazardous

false
Input Capacitance (Ciss) (Max) @ Vds

125 pF @ 400 V
Kind of channel

enhanced
Kind of package

tape
Kind of transistor

HEMT
Kind of transistor

HEMT
Manufacturer

NEXPERIA
Manufacturer

NEXPERIA
Mounting

SMD
Mounting Type

Surface Mount, Wettable Flank
No. of Pins

8Pins
On-state resistance

0.14Ω
Operating Temperature

-55°C ~ 150°C (TJ)
Package / Case

8-PowerVDFN
Packaging

Tape & Reel (TR)
Polarisation

Unipolar
Polarisation

Unipolar
Power dissipation

113W
Power dissipation

113W
Power Dissipation (Max)

113W (Tc)
productTraceability

No
Pulsed drain current

32A
Pulsed drain current

32A
Qualification

-
Rds On (Max) @ Id, Vgs

140mOhm @ 5A, 6V
rohsCompliant

Yes
rohsPhthalatesCompliant

Yes
Supplier Device Package

DFN5060-5
SVHC

No SVHC (23-Jan-2024)
tariffCode

85381090
Technology

GaNFET (Gallium Nitride)
Technology

GaN
Technology

GaN
Type of transistor

N-JFET
Type of transistor

N-JFET
Typical Gate Charge

3.5nC
usEccn

EAR99
Vgs (Max)

+7V, -1.4V
Vgs(th) (Max) @ Id

2.5V @ 17.2mA