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GAN140-650EBEZ

GAN140-650EBEZ

GaN FETs SOT8074 650V 17A FET

Category

Mfr Part #

GAN140-650EBEZ

Life Cycle

New Product

HSN Code

85412900

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Suppliers

Mouser Electronics

Mouser Electronics

Stock : 0

Packaging Type

-

VendorPart#

771-GAN140-650EBEZ

Factory Lead Time

56 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Cut Tape (CT)

VendorPart#

1727-GAN140-650EBEZCT-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Tape & Reel (TR)

VendorPart#

1727-GAN140-650EBEZTR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 2500
Mult: 2500

0

Element14

Element14

Stock : 4769

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

4198480

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 1
Mult: 1

Element14

Element14

Stock : 4769

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

4198480RL

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 100
Mult: 1

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Digi-Reel®

VendorPart#

1727-GAN140-650EBEZDKR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

GAN140-650EBEZ

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 2500
Mult: 2500

0

Specifications

Case

DFN8080-8

Continuous Drain Current Id

17A

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drain current

17A

Drain Source On State Resistance

0.106ohm

Drain Source Voltage Vds

650V

Drain to Source Voltage (Vdss)

650 V

Drain-source voltage

650V

Drive Voltage (Max Rds On, Min Rds On)

6V

euEccn

NLR

Features of semiconductor devices

Kelvin terminal

FET Feature

-

FET Type

N-Channel

Gate charge

3.5nC

Gate Charge (Qg) (Max) @ Vgs

3.5 nC @ 6 V

Gate-source voltage

-1.4...7V

Grade

-

hazardous

false

Input Capacitance (Ciss) (Max) @ Vds

125 pF @ 400 V

Kind of channel

enhanced

Kind of package

tape

Kind of transistor

HEMT

Manufacturer

NEXPERIA

Mounting

SMD

Mounting Type

Surface Mount, Wettable Flank

No. of Pins

8Pins

On-state resistance

0.14Ω

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

8-VDFN Exposed Pad

Packaging

Tape & Reel (TR)

Polarisation

Unipolar

Power dissipation

113W

Power Dissipation (Max)

113W (Tc)

Product Range

TUK SGACK902S Keystone Coupler

productTraceability

No

Pulsed drain current

32A

Qualification

-

Rds On (Max) @ Id, Vgs

140mOhm @ 5A, 6V

rohsCompliant

Yes

rohsPhthalatesCompliant

Yes

Supplier Device Package

DFN8080-8

SVHC

No SVHC (23-Jan-2024)

tariffCode

85381090

Technology

GaNFET (Gallium Nitride)

Technology

GaN

Transistor Case Style

DFN8080

Transistor Mounting

Surface Mount

Type of transistor

N-JFET

Typical Gate Charge

3.5nC

usEccn

EAR99

Vgs (Max)

+7V, -1.4V

Vgs(th) (Max) @ Id

2.5V @ 17.2mA