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GAN111-650WSBQ

GAN111-650WSBQ

GaN FETs GAN111-650WSB/SOT429/TO-247

Category

Mfr Part #

GAN111-650WSBQ

Mfr

Life Cycle

New Product

HSN Code

85412900

Nexperia

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Suppliers

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 210

Packaging Type

Tube

VendorPart#

1727-GAN111-650WSBQ-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

Mouser Electronics

Part Status : New Product

Mouser Electronics

Stock : 169

Packaging Type

-

VendorPart#

771-GAN111-650WSBQ

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

Element14

Part Status : STOCKED

Element14

Stock : 260

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

4550980RL

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 10
Mult: 1

Element14

Part Status : STOCKED

Element14

Stock : 260

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

4550980

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 1
Mult: 1

Specifications

Continuous Drain Current Id

21A
Current - Continuous Drain (Id) @ 25°C

21A (Ta)
Drain Source On State Resistance

0.114ohm
Drain Source Voltage Vds

650V
Drain to Source Voltage (Vdss)

650 V
Drive Voltage (Max Rds On, Min Rds On)

10V
euEccn

NLR
FET Feature

-
FET Type

N-Channel
Gate Charge (Qg) (Max) @ Vgs

4.9 nC @ 10 V
Grade

-
hazardous

false
Input Capacitance (Ciss) (Max) @ Vds

336 pF @ 400 V
Mounting Type

Through Hole
No. of Pins

3Pins
Operating Temperature

-55°C ~ 175°C (TJ)
Package / Case

TO-247-3
Power Dissipation (Max)

107W (Ta)
Product Range

-
productTraceability

No
Qualification

-
Rds On (Max) @ Id, Vgs

114mOhm @ 14A, 10V
rohsCompliant

Yes
rohsPhthalatesCompliant

Yes
Supplier Device Package

TO-247-3L
SVHC

No SVHC (27-Jun-2024)
tariffCode

85381090
Technology

GaNFET (Gallium Nitride)
Transistor Case Style

TO-247
Transistor Mounting

Through Hole
Typical Gate Charge

4.9nC
usEccn

EAR99
Vgs (Max)

±20V
Vgs(th) (Max) @ Id

4.8V @ 1mA