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GAN039-650NTBZ

GAN039-650NTBZ

GaN FETs 650 V, 35 mohm Gallium Nitride (GaN) FET in a TO-247 package

Category

Mfr Part #

GAN039-650NTBZ

Life Cycle

New Product

HSN Code

85412900

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Suppliers

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Tape & Reel (TR)

VendorPart#

1727-GAN039-650NTBZTR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1000
Mult: 1000

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Digi-Reel®

VendorPart#

1727-GAN039-650NTBZDKR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

Mouser Electronics

Mouser Electronics

Stock : 2

Packaging Type

-

VendorPart#

771-GAN039-650NTBZ

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Cut Tape (CT)

VendorPart#

1727-GAN039-650NTBZCT-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

Specifications

Current - Continuous Drain (Id) @ 25°C

58.5A (Tc)

Drain to Source Voltage (Vdss)

650 V

Drive Voltage (Max Rds On, Min Rds On)

10V

FET Feature

-

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

26 nC @ 10 V

Grade

-

Input Capacitance (Ciss) (Max) @ Vds

1980 pF @ 400 V

Mounting Type

Surface Mount

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

12-BESOP (0.370", 9.40mm Width), Exposed Pad

Power Dissipation (Max)

250W (Tc)

Qualification

-

Rds On (Max) @ Id, Vgs

39mOhm @ 32A, 10V

Supplier Device Package

CCPAK1212i

Technology

GaNFET (Gallium Nitride)

Vgs (Max)

±20V

Vgs(th) (Max) @ Id

4.6V @ 1mA