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BUK663R7-75C118

BUK663R7-75C118

Now Nexperia BUK663R7-75C - Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Mfr Part #

BUK663R7-75C118

Life Cycle

HSN Code

85412900

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Suppliers

Element14

Element14

Stock : 0

Packaging Type

-

VendorPart#

1863311

Factory Lead Time

218 Days

Ware House

UK Warehouse

Date Code

Min: 1
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Digi-Reel®

VendorPart#

1727-5524-6-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Tape & Reel (TR)

VendorPart#

1727-5524-2-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 4800
Mult: 4800

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Cut Tape (CT)

VendorPart#

1727-5524-1-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

Specifications

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drain to Source Voltage (Vdss)

75 V

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

FET Feature

-

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

234 nC @ 10 V

Grade

automotive

Input Capacitance (Ciss) (Max) @ Vds

15450 pF @ 25 V

Mounting Type

Surface Mount

Operating Temperature

-55°C ~ 175°C (TJ)

Package / Case

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Power Dissipation (Max)

306W (Tc)

Qualification

AEC-Q101

Rds On (Max) @ Id, Vgs

4mOhm @ 25A, 10V

Supplier Device Package

D2PAK

Technology

MOSFET (Metal Oxide)

Vgs (Max)

±16V

Vgs(th) (Max) @ Id

2.8V @ 1mA