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JAN2N6798

MOSFET N-CH 200V 5.5A TO39

DigiKey Electronics

Part Status : Obsolete

DigiKey Electronics

* US shipping restriction from digikey

RESTRICTED*

Packaging Type

Bulk

VendorPart#

150-JAN2N6798-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 0

Mult: 0

Order Value

Current - Continuous Drain (Id) @ 25°C	5.5A (Tc)
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42.07 nC @ 10 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-205AF Metal Can
Packaging	Bulk
Power Dissipation (Max)	800mW (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs	420mOhm @ 5.5A, 10V
Supplier Device Package	TO-39
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA