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MSC040SMA120SDT/R

MOSFET SIC 1200 V 40 MOHM TO-263

DigiKey Electronics

Part Status : Active

DigiKey Electronics

* US shipping restriction from digikey

RESTRICTED*

Packaging Type

Tape & Reel (TR)

VendorPart#

150-MSC040SMA120SDT/RTR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Within 2 years

Quantity

Min: 0

Mult: 0

Order Value

Current - Continuous Drain (Id) @ 25°C	68A (Tc)
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18V, 20V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	137 nC @ 20 V
Grade	-
Input Capacitance (Ciss) (Max) @ Vds	1962 pF @ 1000 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Power Dissipation (Max)	338W (Tc)
Qualification	-
Rds On (Max) @ Id, Vgs	50mOhm @ 40A, 20V
Supplier Device Package	TO-268
Technology	SiCFET (Silicon Carbide)
Vgs (Max)	+23V, -10V
Vgs(th) (Max) @ Id	2.7V @ 2mA