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MSC025SMA120B4

MSC025SMA120B4

SiC MOSFETs MOSFET SIC 1200 V 25 mOhm TO-247-4

Category

Mfr Part #

MSC025SMA120B4

Life Cycle

HSN Code

85412900

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Suppliers

Master Electronics

Master Electronics

Stock : 60

Packaging Type

-

VendorPart#

-

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

MSC025SMA120B4

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

0

Element14

Element14

Stock : 21

Packaging Type

EACH

VendorPart#

3941427

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 1
Mult: 1

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Tube

VendorPart#

150-MSC025SMA120B4-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

Mouser Electronics

Mouser Electronics

Stock : 264

Packaging Type

-

VendorPart#

494-MSC025SMA120B4

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

Specifications

Case

TO247-4

Current - Continuous Drain (Id) @ 25°C

103A (Tc)

Drain current

73A

Drain to Source Voltage (Vdss)

1200V

Drain-source voltage

1.2kV

Drive Voltage (Max Rds On, Min Rds On)

20V

Features of semiconductor devices

Kelvin terminal

FET Feature

-

FET Type

N-Channel

Gate charge

232nC

Gate Charge (Qg) (Max) @ Vgs

232nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds

3020pF @ 1000V

Kind of channel

enhanced

Manufacturer

MICROCHIP TECHNOLOGY

Mounting

THT

Mounting Type

Through Hole

On-state resistance

31mΩ

Operating Temperature

-55°C ~ 175°C (TJ)

Package / Case

TO-247-4

Packaging

tube

Part Status

Active

Polarisation

Unipolar

Power dissipation

500W

Power Dissipation (Max)

500W (Tc)

Pulsed drain current

275A

Rds On (Max) @ Id, Vgs

31mOhm @ 40A, 20V

Supplier Device Package

TO-247-4

Technology

SiCFET (Silicon Carbide)

Technology

SiC

Type of transistor

N-MOSFET

Vgs (Max)

+23V, -10V

Vgs(th) (Max) @ Id

2.8V @ 3mA