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APT45GP120B2DQ2G

APT45GP120B2DQ2G

IGBT Transistors FG, IGBT-COMBI, 1200V, TO-247 T-MAX, RoHS

Mfr Part #

APT45GP120B2DQ2G

Life Cycle

HSN Code

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Suppliers

Mouser Electronics

Mouser Electronics

* Not available for purchase by distributors.

RESTRICTED*


Packaging Type

-

VendorPart#

494-APT45GP120B2DQ2G

Factory Lead Time

294 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

TME

TME

Stock : 30

Packaging Type

-

VendorPart#

APT45GP120B2DQ2G

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Tube

VendorPart#

APT45GP120B2DQ2G-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Min: 1
Mult: 1

0

Master Electronics

Master Electronics

Stock : 0

Packaging Type

-

VendorPart#

-

Factory Lead Time

42 Days

Ware House

US Warehouse

Date Code

Min: 2
Mult: 1

0

Specifications

Case

T-Max

Collector current

54A

Collector-emitter voltage

1.2kV

Current - Collector (Ic) (Max)

113A

Current - Collector Pulsed (Icm)

170A

Features of semiconductor devices

integrated anti-parallel diode

Gate charge

185nC

Gate-emitter voltage

±30V

IGBT Type

PT

Input Type

Standard

Kind of package

tube

Manufacturer

MICROCHIP TECHNOLOGY

Mounting

THT

Mounting Type

Through Hole

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

TO-247-3 Variant

Packaging

tube

Part Status

Active

Power - Max

625W

Power dissipation

625W

Pulsed collector current

170A

Switching Energy

900µJ (on), 905µJ (off)

Td (on/off) @ 25°C

18ns/100ns

Technology

PT

Technology

POWER MOS 7®

Test Condition

600V, 45A, 5Ohm, 15V

Turn-off time

230ns

Turn-on time

47ns

Type of transistor

IGBT

Vce(on) (Max) @ Vge, Ic

3.9V @ 15V, 45A

Voltage - Collector Emitter Breakdown (Max)

1200V