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APT12057B2LLG

APT12057B2LLG

MOSFETs MOSFET MOS7 1200 V 57 Ohm TO-247 MAX

Mouser Electronics

Part Status :

Mouser Electronics

Stock : 27

Packaging Type

VendorPart#

494-APT12057B2LLG

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

TME

Part Status :

TME

Stock : 0

Packaging Type

VendorPart#

APT12057B2LLG

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 0

Packaging Type

Bulk

VendorPart#

APT12057B2LLG-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541.29.0095

Date Code

Within 2 years

Quantity

Min: 30

Mult: 30

Order Value

Master Electronics

Stock : 0

Packaging Type

VendorPart#

Factory Lead Time

40 Days

Ware House

US Warehouse

Date Code

Within 2 years

Quantity

Min: 8

Mult: 1

Order Value

Specifications

Case	TO247MAX
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Drain current	22A
Drain to Source Voltage (Vdss)	1200 V
Drain-source voltage	1.2kV
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate charge	290nC
Gate Charge (Qg) (Max) @ Vgs	290 nC @ 10 V
Gate-source voltage	±30V
Input Capacitance (Ciss) (Max) @ Vds	6200 pF @ 25 V
Kind of channel	enhanced
Manufacturer	MICROCHIP (MICROSEMI)
Mounting	THT
Mounting Type	Through Hole
On-state resistance	570mΩ
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-247-3
Packaging	Bulk
Polarisation	Unipolar
Power dissipation	690W
Power Dissipation (Max)	690W (Tc)
Pulsed drain current	88A
Rds On (Max) @ Id, Vgs	570mOhm @ 11A, 10V
Supplier Device Package	T-MAX™ [B2]
Technology	MOSFET (Metal Oxide)
Technology	POWER MOS 7®
Type of transistor	N-MOSFET
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	5V @ 2.5mA