Final Unit Price is calculated at the checkout is inclusive of Indian Customs Duty, International Freight, Insurance, Handling Fees and other charges

APT1001RSVRG

APT1001RSVRG

Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A

TME

Part Status :

TME

Stock : 26

Packaging Type

VendorPart#

APT1001RSVRG

Ware House

Poland Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

Master Electronics

Part Status :

Master Electronics

Stock : 0

Packaging Type

VendorPart#

Factory Lead Time

29 Days

Ware House

US Warehouse

Date Code

Quantity

Min: 3

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

* US shipping restriction from digikey

RESTRICTED*

Packaging Type

Tube

VendorPart#

APT1001RSVRG-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541.29.0095

Date Code

Within 2 years

Quantity

Min: 40

Mult: 40

Order Value

Specifications

Case	D3PAK
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drain current	11A
Drain to Source Voltage (Vdss)	1000V
Drain-source voltage	1kV
FET Feature	-
FET Type	N-Channel
Gate charge	225nC
Gate Charge (Qg) (Max) @ Vgs	225nC @ 10V
Gate-source voltage	±30V
Input Capacitance (Ciss) (Max) @ Vds	3660pF @ 25V
Kind of channel	enhanced
Manufacturer	MICROCHIP TECHNOLOGY
Mounting	SMD
Mounting Type	Surface Mount
On-state resistance	1Ω
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Packaging	tube
Part Status	Active
Polarisation	Unipolar
Power dissipation	280W
Pulsed drain current	44A
Rds On (Max) @ Id, Vgs	1Ohm @ 500mA, 10V
Supplier Device Package	D3 [S]
Technology	MOSFET (Metal Oxide)
Technology	POWER MOS 5®
Type of transistor	N-MOSFET
Vgs(th) (Max) @ Id	4V @ 1mA