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SICW060N120H-BP

SICW060N120H-BP

SiC MOSFETs

Category

Mfr Part #

SICW060N120H-BP

Life Cycle

New Product

HSN Code

00000000

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Suppliers

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Tube

VendorPart#

353-SICW060N120H-BP-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Within 2 years

Min: 1800
Mult: 1800

0

Mouser Electronics

Mouser Electronics

Stock : 0

Packaging Type

-

VendorPart#

833-SICW060N120H-BP

Factory Lead Time

140 Days

Ware House

US Warehouse

HTS Code

0000000000

Date Code

Within 2 years

Min: 1800
Mult: 1800

0

Specifications

Current - Continuous Drain (Id) @ 25°C

44.5A (Tc)

Drain to Source Voltage (Vdss)

1200 V

Drive Voltage (Max Rds On, Min Rds On)

20V

FET Feature

-

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

129 nC @ 20 V

Grade

-

Input Capacitance (Ciss) (Max) @ Vds

2200 pF @ 800 V

Mounting Type

Through Hole

Operating Temperature

-55°C ~ 175°C (TJ)

Package / Case

TO-247-3

Power Dissipation (Max)

250W (Tc)

Qualification

-

Rds On (Max) @ Id, Vgs

80mOhm @ 20A, 20V

Supplier Device Package

TO-247AB

Technology

SiC (Silicon Carbide Junction Transistor)

Vgs (Max)

+25V, -10V

Vgs(th) (Max) @ Id

4.5V @ 20mA