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SICW050N065H4-BP

SICW050N065H4-BP

SiC MOSFETs SiC MOSFET,TO-247-4

Category

Mfr Part #

SICW050N065H4-BP

Life Cycle

New Product

HSN Code

85412900

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Suppliers

Mouser Electronics

Mouser Electronics

Stock : 355

Packaging Type

-

VendorPart#

833-SICW050N065H4-BP

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Bulk

VendorPart#

353-SICW050N065H4-BP-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Within 2 years

Min: 1800
Mult: 1800

0

Specifications

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drain to Source Voltage (Vdss)

650 V

Drive Voltage (Max Rds On, Min Rds On)

20V

FET Feature

-

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

121 nC @ 20 V

Grade

-

Input Capacitance (Ciss) (Max) @ Vds

1850 pF @ 400 V

Mounting Type

Through Hole

Operating Temperature

-55°C ~ 175°C (TJ)

Package / Case

TO-247-4

Power Dissipation (Max)

250W (Tc)

Qualification

-

Rds On (Max) @ Id, Vgs

65mOhm @ 20A, 20V

Supplier Device Package

TO-247-4

Technology

SiCFET (Silicon Carbide)

Vgs (Max)

+20V, -5V

Vgs(th) (Max) @ Id

4.5V @ 20mA