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SICBG160N120A-TP

SICBG160N120A-TP

MOSFETs

Category

Mfr Part #

SICBG160N120A-TP

Life Cycle

New Product

HSN Code

85412900

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Suppliers

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Tape & Reel (TR)

VendorPart#

353-SICBG160N120A-TPTR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 800
Mult: 800

0

Mouser Electronics

Mouser Electronics

Stock : 0

Packaging Type

-

VendorPart#

833-SICBG160N120A-TP

Factory Lead Time

140 Days

Ware House

US Warehouse

Date Code

Within 2 years

Min: 800
Mult: 800

0

Specifications

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drain to Source Voltage (Vdss)

1200 V

Drive Voltage (Max Rds On, Min Rds On)

16V, 20V

FET Feature

-

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

47 nC @ 18 V

Grade

-

Input Capacitance (Ciss) (Max) @ Vds

780 pF @ 1000 V

Mounting Type

Surface Mount

Operating Temperature

-55°C ~ 175°C (TJ)

Package / Case

TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Power Dissipation (Max)

116W (Tc)

Qualification

-

Rds On (Max) @ Id, Vgs

140mOhm @ 9A, 20V

Supplier Device Package

TO-263-7

Technology

SiCFET (Silicon Carbide)

Vgs (Max)

+22V, -5V

Vgs(th) (Max) @ Id

3V @ 2.5mA