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LSIC1MO170T0750

LSIC1MO170T0750

MOSFET 1700V/750MOHM SIC MOSFET

Element14

Part Status : STOCKED

Element14

Stock : 189

Packaging Type

EACH

VendorPart#

3677984

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 879

Packaging Type

Tube

VendorPart#

18-LSIC1MO170T0750-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Mouser Electronics

Part Status :

Mouser Electronics

Stock : 4926

Packaging Type

VendorPart#

576-LSIC1MO170T0750

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Channel Type	N Channel
Continuous Drain Current Id	6.4A
Current - Continuous Drain (Id) @ 25°C	6.4A (Tc)
Drain Source On State Resistance	0.75ohm
Drain Source Voltage Vds	1.7kV
Drain to Source Voltage (Vdss)	1700 V
Drive Voltage (Max Rds On, Min Rds On)	20V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 20 V
Gate Source Threshold Voltage Max	2.8V
Grade	-
Input Capacitance (Ciss) (Max) @ Vds	200 pF @ 1000 V
MOSFET Module Configuration	Single
Mounting Type	Surface Mount
MSL	MSL 1 - Unlimited
No. of Pins	7Pins
Operating Temperature	-55°C ~ 175°C (TJ)
Operating Temperature Max	175°C
Package / Case	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Power dissipation	65W
Power Dissipation (Max)	65W (Tc)
Product Range	-
Qualification	-
Rds On (Max) @ Id, Vgs	1Ohm @ 2A, 20V
Rds(on) Test Voltage	20V
Supplier Device Package	TO-263-7L
SVHC	No SVHC (19-Jan-2021)
Technology	SiCFET (Silicon Carbide)
Transistor Case Style	TO-263
Vgs (Max)	+22V, -6V
Vgs(th) (Max) @ Id	4V @ 1mA