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LSIC1MO170E1000

LSIC1MO170E1000

MOSFET 1700V 1000mOhm SiC MOSFET

Category

Mfr Part #

LSIC1MO170E1000

Life Cycle

New Product

HSN Code

85412900

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Suppliers

Mouser Electronics

Mouser Electronics

Stock : 0

Packaging Type

-

VendorPart#

576-LSIC1MO170E1000

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

LSIC1MO170E1000

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 450
Mult: 450

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Tube

VendorPart#

F11760-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 450
Mult: 450

0

Element14

Element14

Stock : 0

Packaging Type

EACH

VendorPart#

3361192

Factory Lead Time

183 Days

Ware House

UK Warehouse

Date Code

Min: 1
Mult: 1

0

Specifications

Continuous Drain Current Id

5A

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Drain Source Voltage Vds

1.7kV

Drain to Source Voltage (Vdss)

1700 V

Drive Voltage (Max Rds On, Min Rds On)

15V, 20V

FET Feature

-

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

15 nC @ 20 V

Input Capacitance (Ciss) (Max) @ Vds

200 pF @ 1000 V

MOSFET Configuration

Single

Mounting Type

Through Hole

No. of Pins

3Pins

On Resistance Rds(on)

0.75ohm

Operating Temperature

-55°C ~ 150°C (TJ)

Operating Temperature Max

150°C

Package / Case

TO-247-3

Packaging

tube

Part Status

Obsolete

Power Dissipation (Max)

54W (Tc)

Power Dissipation Pd

54W

Product Range

-

Rds On (Max) @ Id, Vgs

1Ohm @ 2A, 20V

Rds(on) Test Voltage Vgs

20V

Supplier Device Package

TO-247AD

SVHC

No SVHC (16-Jul-2019)

Technology

SiCFET (Silicon Carbide)

Threshold Voltage Vgs

2.5V

Transistor Case Style

TO-247

Transistor Polarity

N Channel

Vgs (Max)

+22V, -6V

Vgs(th) (Max) @ Id

4V @ 1mA