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LSIC1MO120G0025

LSIC1MO120G0025

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; Idm: 200A; 500W

Mfr Part #

LSIC1MO120G0025

Life Cycle

HSN Code

0000

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Suppliers

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

LSIC1MO120G0025

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

0

Specifications

Case

TO247-4

Drain current

70A

Drain-source voltage

1.2kV

Features of semiconductor devices

Kelvin terminal

Gate charge

265nC

Gate-source voltage

-5...20V

Kind of channel

enhancement

Kind of package

tube

Manufacturer

LITTELFUSE

Mounting

THT

On-state resistance

25mΩ

Polarisation

Unipolar

Power dissipation

500W

Pulsed drain current

200A

Technology

SiC

Type of transistor

N-MOSFET