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LSIC1MO120E0120

LSIC1MO120E0120

MOSFET 1200 V 120 mOhm SiC Mosfet

Element14

Part Status : STOCKED

Element14

Stock : 0

Packaging Type

EACH

VendorPart#

2889732

Factory Lead Time

337 Days

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 0

Packaging Type

Tube

VendorPart#

F11004-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541.29.0095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

TME

Part Status :

TME

Stock : 0

Packaging Type

VendorPart#

LSIC1MO120E0120

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

Mouser Electronics

Part Status :

Mouser Electronics

Stock : 1698

Packaging Type

VendorPart#

576-LSIC1MO120E0120

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Channel Type	N Channel
Continuous Drain Current Id	27A
Current - Continuous Drain (Id) @ 25°C	27A (Tc)
Drain Source On State Resistance	0.12ohm
Drain Source Voltage Vds	1.2kV
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	20V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 20 V
Gate Source Threshold Voltage Max	2.8V
Input Capacitance (Ciss) (Max) @ Vds	1125 pF @ 800 V
MOSFET Module Configuration	Single
Mounting Type	Through Hole
MSL	-
No. of Pins	3Pins
Operating Temperature	-55°C ~ 150°C (TJ)
Operating Temperature Max	150°C
Package / Case	TO-247-3
Packaging	tube
Part Status	Active
Power dissipation	139W
Power Dissipation (Max)	139W (Tc)
Product Range	LSIC1MO120
Rds On (Max) @ Id, Vgs	150mOhm @ 14A, 20V
Rds(on) Test Voltage	20V
Supplier Device Package	TO-247AD
SVHC	No SVHC (15-Jan-2018)
Technology	SiCFET (Silicon Carbide)
Transistor Case Style	TO-247
Vgs (Max)	+22V, -6V
Vgs(th) (Max) @ Id	4V @ 7mA