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LSIC1MO120E0080

LSIC1MO120E0080

MOSFET 1200V 80mOhm SiC MOSFET

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 380

Packaging Type

Tube

VendorPart#

F10335-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Mouser Electronics

Part Status :

Mouser Electronics

Stock : 10

Packaging Type

VendorPart#

576-LSICMO120E0080

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

TME

Part Status :

TME

Stock : 0

Packaging Type

VendorPart#

LSIC1MO120E0080

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

Element14

Part Status : STOCKED

Element14

Stock : 1268

Packaging Type

EACH

VendorPart#

3361191

Ware House

UK Warehouse

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Continuous Drain Current Id	39A
Current - Continuous Drain (Id) @ 25°C	39A (Tc)
Drain Source Voltage Vds	1.2kV
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	20V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	95 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds	1825 pF @ 800 V
MOSFET Configuration	Single
Mounting Type	Through Hole
No. of Pins	3Pins
On Resistance Rds(on)	0.08ohm
Operating Temperature	-55°C ~ 150°C
Operating Temperature Max	150°C
Package / Case	TO-247-3
Packaging	tube
Part Status	Active
Power Dissipation (Max)	179W (Tc)
Power Dissipation Pd	179W
Product Range	-
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 20V
Rds(on) Test Voltage Vgs	20V
Supplier Device Package	TO-247AD
Technology	SiCFET (Silicon Carbide)
Threshold Voltage Vgs	2.8V
Transistor Case Style	TO-247
Transistor Polarity	N Channel
Vgs (Max)	+22V, -6V
Vgs(th) (Max) @ Id	4V @ 10mA