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IXTT3N200P3HV

MOSFET N-CH 2000V 3A TO268

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 295

Packaging Type

Tube

VendorPart#

IXTT3N200P3HV-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Drain to Source Voltage (Vdss)	2000 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 10 V
Grade	-
Input Capacitance (Ciss) (Max) @ Vds	1860 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Power Dissipation (Max)	520W (Tc)
Qualification	-
Rds On (Max) @ Id, Vgs	8Ohm @ 1.5A, 10V
Supplier Device Package	TO-268HV (IXTT)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	5V @ 250µA