Final Unit Price is calculated at the checkout is inclusive of Indian Customs Duty, International Freight, Insurance, Handling Fees and other charges

IXYH8N250C

Transistor: IGBT; XPT™; 2.5kV; 29A; 280W; TO247

TME

Part Status :

TME

Stock : 0

Packaging Type

VendorPart#

IXYH8N250C

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

Part Status :

DigiKey Electronics

Stock : 0

Packaging Type

VendorPart#

238-IXYH8N250C-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Quantity

Min: 0

Mult: 0

Order Value

Case	TO247
Collector current	29A
Collector-emitter voltage	2.5kV
Current - Collector (Ic) (Max)	29A
Current - Collector Pulsed (Icm)	70A
Features of semiconductor devices	High Voltage
Gate charge	45nC
Gate-emitter voltage	±20V
IGBT Type	-
Input Type	Standard
Kind of package	tube
Manufacturer	IXYS
Mounting	THT
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-247-3
Packaging	tube
Part Status	Active
Power - Max	280W
Power dissipation	280W
Pulsed collector current	32A
Reverse Recovery Time (trr)	5ns
Supplier Device Package	TO-247AD
Switching Energy	2.6mJ (on), 1.07mJ (off)
Td (on/off) @ 25°C	11ns/180ns
Technology	XPT™
Test Condition	1250V, 8A, 15Ohm, 15V
Turn-off time	180ns
Turn-on time	12ns
Type of transistor	IGBT
Vce(on) (Max) @ Vge, Ic	4V @ 15V, 8A
Voltage - Collector Emitter Breakdown (Max)	2500V