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IXGT16N170AH1

IXGT16N170AH1

Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268

Mfr Part #

IXGT16N170AH1

Mfr

Life Cycle

HSN Code

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Suppliers

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

IXGT16N170AH1

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

0

Specifications

Case

TO268

Collector current

11A

Collector-emitter voltage

1.7kV

Features of semiconductor devices

High Voltage

Gate charge

70nC

Gate-emitter voltage

±20V

Kind of package

tube

Manufacturer

IXYS

Mounting

SMD

Power dissipation

190W

Pulsed collector current

40A

Technology

NPT

Turn-off time

298ns

Turn-on time

35ns

Type of transistor

IGBT