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IXGR32N90B2D1

IXGR32N90B2D1

Transistor: IGBT; HiPerFASTâ„¢; 900V; 22A; 160W; PLUS247â„¢

Mfr Part #

IXGR32N90B2D1

Mfr

Life Cycle

HSN Code

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Suppliers

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

IXGR32N90B2D1

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Min: 1
Mult: 1

0

Specifications

Case

PLUS247â„¢

Collector current

22A

Collector-emitter voltage

900V

Gate charge

89nC

Gate-emitter voltage

±20V

Kind of package

tube

Manufacturer

IXYS

Mounting

THT

Power dissipation

160W

Pulsed collector current

200A

Technology

HiPerFASTâ„¢

Technology

PT

Turn-off time

690ns

Turn-on time

42ns

Type of transistor

IGBT