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IXFH90N65X3

IXFH90N65X3

MOSFETs TO247 650V 90A N-CH X3CLASS

TME

Part Status :

TME

Stock : 0

Packaging Type

VendorPart#

IXFH90N65X3

Factory Lead Time

0 Days

Ware House

Poland Warehouse

Date Code

Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status : Active

DigiKey Electronics

Stock : 0

Packaging Type

Tube

VendorPart#

238-IXFH90N65X3-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541.29.0095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Mouser Electronics

Part Status :

Mouser Electronics

Stock : 0

Packaging Type

VendorPart#

747-IXFH90N65X3

Factory Lead Time

224 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 1

Mult: 1

Order Value

Specifications

Case	TO247-3
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Drain current	90A
Drain to Source Voltage (Vdss)	650 V
Drain-source voltage	650V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate charge	95nC
Gate Charge (Qg) (Max) @ Vgs	95 nC @ 10 V
Gate-source voltage	±20V
Input Capacitance (Ciss) (Max) @ Vds	6080 pF @ 25 V
Kind of channel	enhanced
Kind of package	tube
Manufacturer	IXYS
Mounting	THT
Mounting Type	Through Hole
On-state resistance	33mΩ
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-247-3
Packaging	tube
Part Status	Active
Polarisation	Unipolar
Power dissipation	960W
Power Dissipation (Max)	960W (Tc)
Pulsed drain current	150A
Rds On (Max) @ Id, Vgs	33mOhm @ 45A, 10V
Reverse recovery time	175ns
Supplier Device Package	TO-247 (IXFH)
Technology	MOSFET (Metal Oxide)
Technology	X3-Class
Technology	HiPerFET™
Type of transistor	N-MOSFET
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	5.2V @ 4mA