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IPI90R1K0C3XKSA1

MOSFET N-CH 900V 5.7A TO262-3

DigiKey Electronics

Part Status : Obsolete

DigiKey Electronics

* US shipping restriction from digikey

RESTRICTED*

Packaging Type

Tube

VendorPart#

IPI90R1K0C3XKSA1-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Quantity

Min: 0

Mult: 0

Order Value

Current - Continuous Drain (Id) @ 25°C	5.7A (Tc)
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V
Grade	-
Input Capacitance (Ciss) (Max) @ Vds	850 pF @ 100 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-262-3 Long Leads, I2PAK, TO-262AA
Power Dissipation (Max)	89W (Tc)
Qualification	-
Rds On (Max) @ Id, Vgs	1Ohm @ 3.3A, 10V
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.5V @ 370µA