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IPI60R125CPXKSA1

IPI60R125CPXKSA1

Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO262-3

Mfr Part #

IPI60R125CPXKSA1

Life Cycle

HSN Code

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Suppliers

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

IPI60R125CPXKSA1

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Min: 1
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

-

VendorPart#

2156-IPI60R125CPXKSA1-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Min: 89
Mult: 1

0

Specifications

Base Part Number

IPI60R125

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drain to Source Voltage (Vdss)

650V

Drive Voltage (Max Rds On, Min Rds On)

10V

FET Feature

-

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

2500pF @ 100V

Manufacturer

INFINEON TECHNOLOGIES

Mounting Type

Through Hole

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Packaging

tube

Part Status

Active

Power Dissipation (Max)

208W (Tc)

Rds On (Max) @ Id, Vgs

125mOhm @ 16A, 10V

Supplier Device Package

PG-TO262-3

Technology

MOSFET (Metal Oxide)

Vgs (Max)

±20V

Vgs(th) (Max) @ Id

3.5V @ 1.1mA