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IPI60R099CPXKSA1

IPI60R099CPXKSA1

MOSFET HIGH POWER_LEGACY

Mouser Electronics

Part Status :

Mouser Electronics

Stock : 478

Packaging Type

VendorPart#

Ware House

US Warehouse

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Quantity

Min: 1

Mult: 1

Order Value

DigiKey Electronics

Part Status :

DigiKey Electronics

Stock : 0

Packaging Type

VendorPart#

IPI60R099CPXKSA1-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

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Quantity

Min: 500

Mult: 500

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TME

Part Status :

TME

Stock : 0

Packaging Type

VendorPart#

IPI60R099CPXKSA1

Factory Lead Time

0 Days

Ware House

Poland Warehouse

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Quantity

Min: 500

Mult: 500

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Specifications

Base Part Number	IPI60R099
Case	PG-TO262-3-1
Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Drain current	31A
Drain to Source Voltage (Vdss)	600V
Drain-source voltage	600V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V
Gate-source voltage	±20V
Input Capacitance (Ciss) (Max) @ Vds	2800pF @ 100V
Kind of channel	enhanced
Manufacturer	INFINEON TECHNOLOGIES
Mounting	THT
Mounting Type	Through Hole
On-state resistance	99mΩ
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging	tube
Part Status	Active
Polarisation	Unipolar
Power dissipation	255W
Power Dissipation (Max)	255W (Tc)
Rds On (Max) @ Id, Vgs	99mOhm @ 18A, 10V
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Technology	CoolMOS™ CP
Type of transistor	N-MOSFET
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.5V @ 1.2mA