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IPD530N15N3GBTMA1

IPD530N15N3GBTMA1

Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO252-3

Mfr Part #

IPD530N15N3GBTMA1

Life Cycle

HSN Code

85412900

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Suppliers

DigiKey Electronics

DigiKey Electronics

* US shipping restriction from digikey

RESTRICTED*


Packaging Type

Tape & Reel (TR)

VendorPart#

IPD530N15N3GBTMA1TR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 0
Mult: 0

0

DigiKey Electronics

DigiKey Electronics

* US shipping restriction from digikey

RESTRICTED*


Packaging Type

Cut Tape (CT)

VendorPart#

IPD530N15N3GBTMA1CT-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 0
Mult: 0

0

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

IPD530N15N3GBTMA1

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Min: 1
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 0

Packaging Type

Digi-Reel®

VendorPart#

IPD530N15N3GBTMA1DKR-ND

Factory Lead Time

0 Days

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

0

Specifications

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Drain to Source Voltage (Vdss)

150 V

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

FET Feature

-

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

12 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds

887 pF @ 75 V

Mounting Type

Surface Mount

Operating Temperature

-55°C ~ 175°C (TJ)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation (Max)

68W (Tc)

Rds On (Max) @ Id, Vgs

53mOhm @ 18A, 10V

Supplier Device Package

PG-TO252-3

Technology

MOSFET (Metal Oxide)

Vgs (Max)

±20V

Vgs(th) (Max) @ Id

4V @ 35µA