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IPB60R099C6ATMA1

IPB60R099C6ATMA1

Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO263-3

Mfr Part #

IPB60R099C6ATMA1

Life Cycle

HSN Code

85412900

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Suppliers

DigiKey Electronics

DigiKey Electronics

Stock : 2255

Packaging Type

Digi-Reel®

VendorPart#

IPB60R099C6ATMA1DKR-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

TME

TME

Stock : 0

Packaging Type

-

VendorPart#

IPB60R099C6ATMA1

Factory Lead Time

0 Days

Ware House

US Warehouse

Date Code

Min: 1
Mult: 1

0

Element14

Element14

Stock : 0

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

2443389RL

Factory Lead Time

113 Days

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 10
Mult: 1

0

Element14

Element14

Stock : 0

Packaging Type

EACH (SUPPLIED ON CUT TAPE)

VendorPart#

2443389

Factory Lead Time

113 Days

Ware House

UK Warehouse

Date Code

Within 2 years

Min: 1
Mult: 1

0

DigiKey Electronics

DigiKey Electronics

Stock : 2255

Packaging Type

Cut Tape (CT)

VendorPart#

IPB60R099C6ATMA1CT-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1
Mult: 1

DigiKey Electronics

DigiKey Electronics

Stock : 2000

Packaging Type

Tape & Reel (TR)

VendorPart#

IPB60R099C6ATMA1TR-ND

Ware House

US Warehouse

HTS Code

8541290095

Date Code

Within 2 years

Min: 1000
Mult: 1000

Specifications

Channel Type

N Channel

Continuous Drain Current Id

37.9A

Current - Continuous Drain (Id) @ 25°C

37.9A (Tc)

Drain Source On State Resistance

0.09ohm

Drain Source Voltage Vds

650V

Drain to Source Voltage (Vdss)

600 V

Drive Voltage (Max Rds On, Min Rds On)

10V

euEccn

NLR

FET Feature

-

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

119 nC @ 10 V

Gate Source Threshold Voltage Max

3V

hazardous

false

Input Capacitance (Ciss) (Max) @ Vds

2660 pF @ 100 V

Mounting Type

Surface Mount

MSL

MSL 1 - Unlimited

No. of Pins

3Pins

Operating Temperature

-55°C ~ 150°C (TJ)

Operating Temperature Max

150°C

Package / Case

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Power dissipation

278W

Power Dissipation (Max)

278W (Tc)

Product Range

-

productTraceability

No

Qualification

-

Rds On (Max) @ Id, Vgs

99mOhm @ 18.1A, 10V

Rds(on) Test Voltage

10V

rohsCompliant

Yes

rohsPhthalatesCompliant

Yes

Supplier Device Package

PG-TO263-3

SVHC

No SVHC (17-Jan-2023)

tariffCode

85412900

Technology

MOSFET (Metal Oxide)

Transistor Case Style

TO-263 (D2PAK)

Transistor Mounting

Surface Mount

usEccn

EAR99

Vgs (Max)

±20V

Vgs(th) (Max) @ Id

3.5V @ 1.21mA